SSM3J15FU 2014-03-01 1 toshiba field effect transistor silicon p channel mos type SSM3J15FU high speed switching applications analog switch applications ? small package ? low on resistance : r on = 12 (max) (@v gs = ? 4 v) : r on = 32 (max) (@v gs = ? 2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ?30 v gate-source voltage v gss 20 v dc i d ?100 drain current pulse i dp ?200 ma drain power dissipation (ta = 25c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and met hods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.6 mm 2 3) marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm jedec D jeita sc-70 toshiba 2-2e1e weight: 0.006g(typ.) d q 1 2 3 12 3 start of commercial production 2002-03
SSM3J15FU 2014-03-01 2 electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ? 0.1 ma, v gs = 0 ?30 ? ? v drain cut-off current i dss v ds = ?30 v, v gs = 0 ? ? ? 1 a gate threshold voltage v th v ds = ?3 v, i d = ? 0.1 ma ?1.1 ? ? 1.7 v forward transfer admittance ? y fs ? v ds = ? 3 v, i d = ?10 ma 20 ? ? ms i d = ? 10 ma, v gs = ? 4 v ? 8 12 drain-source on resistance r ds (on) i d = ? 1 ma, v gs = ?2.5 v ? 14 32 input capacitance c iss ? 9.1 ? pf reverse transfer capacitance c rss ? 3.5 ? pf output capacitance c oss v ds = ? 3 v, v gs = 0, f = 1 mhz ? 8.6 ? pf turn-on time t on ? 65 ? switching time turn-off time t off v dd = ?5 v, i d = ?10 ma, v gs = 0 to ?5 v ? 175 ? ns switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d = ? 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration for using the device. v dd = ?5 v duty 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c in 0 ? 5v 10 s v dd out 50 r l (c) v out t on 90% 10% ?5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit
SSM3J15FU 2014-03-01 3 id - vds 0 -50 -100 -150 -200 -250 0 -0.5 -1 -1.5 -2 drain-source voltage vds(v) drain current id(ma) common source ta=25c vgs=-2.3v -2.5 -2.7 -3.0 -3.3 -4 -5 -10 -7 id - vgs -0.01 -0.1 -1 -10 -100 -1000 0 -1-2-3-4-5 gate-source voltage vgs(v) drain current id(ma) common source vds=-3v ta=100c rds(on) - id 0 10 20 30 40 -1 -10 -100 -1000 drain current id(ma) vgs=-2.5v -4v rds(on) - vgs 0 2 4 6 8 10 12 14 16 18 20 0 -2-4-6-8-10 gate-source voltage vgs (v) source common id= -1ma rds(on) - ta 0 10 20 30 -25 0 25 50 75 100 125 150 common source vgs=-2.5v,id=-1ma -4v,-10ma vth - ta 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -25 0 25 50 75 100 125 150 gate threshold valtage vth(v) common source id=-0.1ma vds=-3v 25c -25c common source ta=25c ta=100c 25 -25c ambient temperature ta(c) ambient temperature ta(c) drain-source on resistance rds(on) ( ) drain-source on resistance rds(on) ( ) drain-source on resistance rds(on) ( )
SSM3J15FU 2014-03-01 4 |yfs| - id 1 10 100 1000 -1 -10 -100 -1000 drain current id (ma) forword transfer admittance |yfs| (ms) common source vds= -3v ta=25c idr - vds 0 -50 -100 -150 -200 -250 0 0.2 0.4 0.6 0.8 1 1.2 1.4 drain-source voltage vds (v) drain reveres current idr (ma) common source vgs=0v ta=25c c - vds 1 10 100 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) common source vgs=0v f=1mhz ta=25c ciss coss crss t - id 10 100 1000 10000 -0.1 -1 -10 -100 drain current id (ma) switching time t (ns) common source vdd= -5v vgs=0~-5v ta=25c toff tr ton tf pd - ta 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 drain power dissipation pd (mw) ambient temperature ta(c) mounted on fr4 board (25.4mm25.4mm1.6t cu pad:0.6mm 2 3)
SSM3J15FU 2014-03-01 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? product is neither intended nor warranted fo r use in equipments or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage and/or serious public impact ( " unintended use " ). except for specific appl ications as expressly stated in this document, unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used f or automobiles, trains, ships and other transportation, traffic si gnaling equipment, equipment used to control combustions or expl osions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. if you use product for unintended use, toshiba assumes no liability for product. for details, please contact your toshiba sales representative. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability wh atsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? 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